INVITED SPEAKERS
PLENARY SPEAKERS
Anna Fontcuberta i Morral, EPFL, Switzerland
Growth mechanisms of III-V and II-Vs : insights of the nanoscale
Jim Speck, University of California- Santa Barbara, USA
β-Ga2O3: Growth, Doping, and Device Design
INVITED SPEAKERS
Alexandre Arnoult, LAAS-CNRS, Toulouse, France
In-situ magnification inferred curvature measurement applied to dilute bismide growth
Matthew Barone, Cornell University, USA
An MBE Approach to Record-Breaking Millimeter-Wave Tunable Dielectrics
Eva Benckiser, Max Planck Inst., Stuttgart, Germany
Complex oxide interfaces: Mind the facet.
Abderraouf Boucherif, Université de Sherbrooke, Canada
Nanoscale substrate engineering for cost-effective III-V solar cells
W. Alan Doolittle, Georgia Inst. of Technology, USA
Chemical and Kinetic Mechanisms to Overcome Perceived Limitations in III-Nitride Epitaxy
Matthew Hardy, Naval Research Laboratory, USA
Growth of ScAlN: A Multi-functional Nitride
Stephanie Law, University of Delaware, USA Young Investigator MBE Award
Molecular Beam Epitaxy Growth of van der Waals films and nanostructures
Joanna Millunchick, University of Michigan, USA
Kinetics, Morphology, and Microstructure of III-V-Bi alloys
Yuefeng Nie, Nanjing University, China
Extreme tunability and novel functionality in ferroelectric oxide membranes
Sergei V. Novikov, University of Nottingham, UK
High-Temperature MBE of Hexagonal Boron Nitride for Deep-Ultraviolet, Lateral Heterostructures and Single-Photon Emitters
Federico Panciera, C2N, Paris-Saclay, France
Real-time TEM observations of III-V nanowire growth
David Ritchie, University of Cambridge, UK
Semiconductor quantum light sources using InAs quantum dots
Nitin Samarth, Penn State University, USA
Molecular Beam Epitaxy of Hybrid Topological Semimetal Heterostructures
Peter Schüffelgen, FZ-Jülich, Germany
From Materials to Devices: Topological Insulators for Quantum Computation
Chen Shang, Univ. California -Santa Barbara. USA
Robust high temperature operation of quantum dot lasers grown on (001) Si
Gunter Springholz, Johannes Kepler Univ. Linz, Austria
Natural Heterostructure Formation and Magnetic Doping of Bi- and Sb-Chalcogenide based Topological Insulators
Shiro Tsukamoto, Univ. Electro-Communications, Japan
Droplet epitaxy from beginning to present, pursuing initial cluster size
Charles W. Tu, Univ. of California, San Diego,USA Al Cho MBE Award
Bandgap Engineering and Device Applications of Dilute Nitrides
Hideki Yamamoto, NTT Basic Research Lab., Japan
Electron-Beam-Evaporation-Based Multi-Source Oxide MBE as a Synthesis Method for High-Quality and Novel Magnetic Materials--Beyond 3d Transition Metal Compounds