The International Conference on Molecular Beam Epitaxy sponsors the following awards to researchers in the field of molecular beam epitaxy:
The International MBE Advisory Committee is proud to present the Al Cho MBE Award at every international MBE conference in honor of Al Cho, “Father of MBE”, and to recognize individuals who have made fundamental contributions to the science and technology of MBE or enabled by MBE.
The award includes a $5,000 cash prize and an engraved plaque and is sponsored by the North American MBE Conference, Riber, Veeco and SVT Associates..
Previous recipients: Tom Foxon 2004, Yoshiji Horikoshi 2006, Arthur Gossard 2008, Klaus Ploog 2010, Satoshi Hiyamizu 2012, James S. Harris 2014, Jean Massies 2016, Aizhen Li 2018.
Download nomination form
2020 Al Cho Award
Charles Tu, University of California (San Diego)
“For contributions on gas-source MBE of arsenide-phosphide compound semiconductors and novel dilute nitrides for electronic, optoelectronic, and photovoltaic applications”
Charles Tu is a Distinguished Professor of electrical and computer engineering (ECE) at the UCSD Jacobs School of Engineering. He earned his Ph.D. in Engineering and Applied Science from Yale University in 1978 and his B.Sc. (Hon.) in Physics from McGill University in 1971. He was a distinguished member of AT&T Bell Laboratories technical staff from 1980 to 1988. He has authored or co-authored more than 400 refereed technical journal papers. Tu is a Fellow of the IEEE, the American Physical Society, and the AVS Science and Technology Society. He was the recipient of Taiwan's Pan Wen-Yuan Foundation Outstanding Research Award in 2009, and of the North American MBE Innovator Award in 2011.
Charles Tu pioneered gas-source molecular beam epitaxy (GSMBE) growth of III-AsP compound semiconductors, using arsine and phosphine, before the availability of commercial valved arsenic and phosphorus crackers. He was also an early pioneer of GSMBE growth of dilute nitrides, such as Ga(In)NAs, Ga(In)NP, and InN(As)P, using a RF-plasma nitrogen source. Some of these materials are used for better electronic, optoelectronic, and photovoltaic devices, such as heterojunction bipolar transistors with a GaInNAs base and lower turn-on voltage, GaInNP light-emitting diodes with a simpler fabrication process, and wide-bandgap GaNP solar cells with an enhanced conversion efficiency.
- Young Investigator MBE Award
The International MBE Advisory Committee is proud to present the Young Investigator Award to recognize individuals who have made significant contributions to the science and technology of MBE or enabled by MBE by the age of 40 and that show promise of future leadership in the field.
The award includes a $1,000 cash prize and an engraved plaque and is sponsored by the North American MBE Conference.
Previous recipients: Jiro Nishinaga 2012, Homan Yuen and Debdeep Jena 2014, Bharat Jalan 2016, Songrui Zhao 2018.
Download nomination form
Stephanie Law, University of Delaware
“For advances in the growth of novel optical materials including heavily-doped semiconductors, topological insulators, and other van der Waals materials.”
Stephanie Law received her B.S. in Physics from Iowa State University and her Ph.D. in Physics from the University of Illinois Urbana Champaign, after which she held a postdoctoral position in the Electrical Engineering department at Illinois. She joined the faculty in the department of Materials Science and Engineering at the University of Delaware as the Clare Boothe Luce Assistant Professor in 2014 and is currently an Associate Professor at UD. Stephanie has made significant contributions to the science of molecular beam epitaxy in the growth of heavily-doped semiconductors and related structures as well as the growth of chalcogenide-based layered materials including topological insulators. She has won the North American Molecular Beam Epitaxy Young Investigator award, the Department of Energy Early Career award, the AVS Peter Mark Memorial Award, and the Presidential Early Career Award for Scientists and Engineers (PECASE).
- Outstanding Student MBE Award
The Outstanding Student MBE Award is based on the quality of the student's work and the excellence of their presentation and includes students who either present their work orally or as a poster. Presentations are judged at the conference and the best two papers are honored.
Eligibility: Students that graduate before the abstract deadline are not eligible for the outstanding student MBE award.